IRF7420
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 12V 11.5A 8-SOIC
PDF
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 1141
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 12V
Pulsed Drain Current-Max (IDM) 46A
Drain-source On Resistance-Max 0.014Ohm
Drain Current-Max (Abs) (ID) 11.5A
JEDEC-95 Code MS-012AA
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 3529pF @ 10V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 11.5A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish NOT SPECIFIED
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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