Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.01Ohm
Drain Current-Max (Abs) (ID) 13A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ