Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 22m Ω @ 4A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ