IRF7353D1TRPBF
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 6.5A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.44
Unit Price: USD $0.43605
≥1 USD $0.43605
≥10 USD $0.3572
≥100 USD $0.34675
≥500 USD $0.33535
≥1000 USD $0.32395
Inventory: 1095
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 6.5A
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
Turn On Delay Time 8.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 8.9ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 650pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 46mOhm
Rds On Max 32 mΩ
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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