Drain to Source Resistance 46mOhm
FET Feature Schottky Diode (Isolated)
Max Forward Surge Current (Ifsm) 11A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Turn On Delay Time 8.1 ns
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ