FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 32mOhm @ 5.8A, 10V
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ