Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) -3.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
FET Feature Schottky Diode (Isolated)