IRF7326D2PBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 3.6A 8-SOIC
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Rds On Max 100 mΩ
Drain to Source Resistance 160mOhm
FET Feature Schottky Diode (Isolated)
Input Capacitance 440pF
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage -1V
Continuous Drain Current (ID) -3.6A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 17ns
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 100mOhm @ 1.8A, 10V
FET Type P-Channel
Power Dissipation 2W
Power Dissipation-Max 2W Ta
Number of Elements 1
Current Rating -3.6A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series FETKY?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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