Drain to Source Resistance 270mOhm
FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.2A
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ