FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Vgs(th) (Max) @ Id 700mV @ 250μA
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V
Power Dissipation-Max 2W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ