IRF7324D1PBF
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.2A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 16919
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -2.9A
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
Turn On Delay Time 10 ns
Forward Current 1.7A
FET Type P-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Forward Voltage 500mV
Fall Time (Typ) 7.6 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) -2.2A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Input Capacitance 260pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Nominal Vgs -700 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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