Drain to Source Breakdown Voltage -40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -6.2A
Turn-Off Delay Time 210 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 41m Ω @ 6.2A, 10V
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ