Drain to Source Resistance 20mOhm
Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -9.5A
Turn-Off Delay Time 77 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V
Vgs(th) (Max) @ Id 600mV @ 250μA
Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 4.5V
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ