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IRF7210TRPBF

Infineon Technologies
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 12V 16A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 1159
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 50 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 17179pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 212nC @ 5V
Rise Time 3μs
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 30 μs
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -14V
Input Capacitance 17.179nF
Drain to Source Resistance 7mOhm
Rds On Max 7 mΩ

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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