Drain to Source Resistance 7mOhm
Input Capacitance 17.179nF
Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -16A
Turn-Off Delay Time 6.5 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 212nC @ 5V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Input Capacitance (Ciss) (Max) @ Vds 17179pF @ 10V
Vgs(th) (Max) @ Id 600mV @ 500μA
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ