Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) -5.3A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 60m Ω @ 5.3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Tc
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ