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IRF7201TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 7.3A 8-SOIC
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Buying Options
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Inventory: 44616
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7.3A
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 70 mJ
Recovery Time 73 ns
Nominal Vgs 1 V

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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