FET Feature Schottky Diode (Body)
Pulsed Drain Current-Max (IDM) 280A
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 35A Ta 213A Tc
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 13V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Rds On (Max) @ Id, Vgs 1.1m Ω @ 35A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.1W Ta 78W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ