Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 32 mJ
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 74A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 19A Ta 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 13V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Rds On (Max) @ Id, Vgs 3.7m Ω @ 19A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.7 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.1W Ta 32W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ