IRF6810STRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 25V 16A S1
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.6952
≥1 USD $0.6952
Inventory: 4840
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric S1
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 20W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 13V
Current - Continuous Drain (Id) @ 25°C 16A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 25V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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