IRF6785MTR1PBF
RoHS
/
Package DirectFET? Isometric MZ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 3.4A DIRECTFET
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MZ
Number of Pins 7
Supplier Device Package DIRECTFET? MZ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 100MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta 57W Tc
Element Configuration Dual
Power Dissipation 57W
Turn On Delay Time 6.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 7.2 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Input Capacitance 1.5nF
Drain to Source Resistance 85mOhm
Rds On Max 100 mΩ
Nominal Vgs 5 V
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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