IRF6727MTR1PBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 32A DIRECTFET
PDF
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Buying Options
Total Price: USD $12.08
Unit Price: USD $12.0821
≥1 USD $12.0821
≥10 USD $9.91325
≥100 USD $9.60355
≥500 USD $9.29385
≥1000 USD $8.98415
Inventory: 1179
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET? MX
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 6190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V
Rise Time 31ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 6.19nF
Recovery Time 41 ns
Drain to Source Resistance 2.4mOhm
Rds On Max 1.7 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 508μm
Length 5.45mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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