Avalanche Energy Rating (Eas) 260 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0017Ohm
Drain Current-Max (Abs) (ID) 32A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 77nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 6140pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.7m Ω @ 32A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 89W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ