IRF6722STRPBF
RoHS
/
Package DirectFET? Isometric ST
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 13A DIRECTFET
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 3.95mm
Length 4.826mm
Height 506μm
Technical
Rds On Max 7.3 mΩ
Drain to Source Resistance 10.3mOhm
Input Capacitance 1.32nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 8.5 ns
Fall Time (Typ) 5.7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 13A Ta 58A Tc
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 15V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Rds On (Max) @ Id, Vgs 7.3mOhm @ 13A, 10V
FET Type N-Channel
Turn On Delay Time 7.7 ns
Power Dissipation 42W
Power Dissipation-Max 2.2W Ta 42W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package DIRECTFET? ST
Number of Pins 5
Package / Case DirectFET? Isometric ST
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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