IRF6720S2TRPBF
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 11A DIRECTFET-S1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 3.95mm
Length 4.826mm
Height 558.8μm
Technical
Rds On Max 8 mΩ
Drain to Source Resistance 12.8mOhm
Input Capacitance 1.14nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 11 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 35ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V
FET Type N-Channel
Turn On Delay Time 13 ns
Power Dissipation 17W
Power Dissipation-Max 1.7W Ta 17W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package DIRECTFET S1
Number of Pins 4
Package / Case DirectFET? Isometric S1
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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