IRF6718L2TR1PBF
RoHS
/
Package DirectFET? Isometric L6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 61A DIRECTFET L6
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric L6
Number of Pins 13
Supplier Device Package DIRECTFET L6
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 500kOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 4.3W Ta 83W Tc
Element Configuration Single
Power Dissipation 4.3W
Turn On Delay Time 67 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.7mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 13V
Current - Continuous Drain (Id) @ 25°C 61A Ta 270A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 4.5V
Rise Time 140ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 61A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 6.5nF
Recovery Time 59 ns
Drain to Source Resistance 700μOhm
Rds On Max 700 μΩ
Nominal Vgs 1.9 V
Dimensions
Height 508μm
Length 9.144mm
Width 7.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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