IRF6711STR1PBF
RoHS
/
Package DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 19A DIRECTFET-SQ
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.95mm
Length 4.826mm
Height 506μm
Technical
Nominal Vgs 1.8 V
Rds On Max 3.8 mΩ
Drain to Source Resistance 6.5mOhm
Input Capacitance 1.81nF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 7.1 ns
Fall Time (Typ) 5.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Rise Time 13ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 19A Ta 84A Tc
Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 3.8mOhm @ 19A, 10V
FET Type N-Channel
Turn On Delay Time 7.7 ns
Power Dissipation 42W
Power Dissipation-Max 2.2W Ta 42W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package DIRECTFET? SQ
Number of Pins 5
Package / Case DirectFET? Isometric SQ
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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