IRF6709S2TRPBF
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 12A DIRECTFET-S1
PDF
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 1133
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 3.95mm
Length 4.826mm
Height 558.8μm
Technical
Rds On Max 3.8 mΩ
Drain to Source Resistance 13.5mOhm
Input Capacitance 1.01nF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 9.1 ns
Fall Time (Typ) 9.5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 39A Tc
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 7.8mOhm @ 12A, 10V
FET Type N-Channel
Turn On Delay Time 8.4 ns
Power Dissipation 21W
Power Dissipation-Max 1.8W Ta 21W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package DIRECTFET S1
Number of Pins 5
Package / Case DirectFET? Isometric S1
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Copper, Silver, Tin
Alternative Model
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