IRF6708S2TR1PBF
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 13A DIRECTFET-LV
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric S1
Number of Pins 6
Supplier Device Package DIRECTFET S1
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta 20W Tc
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 9.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 27ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.01nF
Drain to Source Resistance 14.3mOhm
Rds On Max 8.9 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 490μm
Length 3.95mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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