Drain to Source Resistance 2.5mOhm
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 32mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 71nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 6580pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 1.8mOhm @ 15A, 10V
Power Dissipation-Max 2.8W Ta 89W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ