IRF6665TR1
RoHS
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Package DirectFET? Isometric SH
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V DIRECTFET-SH
PDF
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Buying Options
Total Price: USD $1.68
Unit Price: USD $1.68435
≥1 USD $1.68435
≥10 USD $1.38225
≥100 USD $1.3395
≥500 USD $1.2958
≥1000 USD $1.25305
Inventory: 1148
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SH
Number of Pins 6
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Turn On Delay Time 7.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 19A
Drain to Source Breakdown Voltage 100V
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Alternative Model
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