IRF6665
RoHS
/
Package DirectFET? Isometric SH
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V DIRECTFET-SH
PDF
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Buying Options
Total Price: USD $4.83
Unit Price: USD $4.83265
≥1 USD $4.83265
≥10 USD $3.9653
≥100 USD $3.8418
≥500 USD $3.71735
≥1000 USD $3.59385
Inventory: 1159
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 11 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 34A
Drain-source On Resistance-Max 0.062Ohm
Drain Current-Max (Abs) (ID) 4.2A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 62m Ω @ 5A, 10V
Transistor Application AMPLIFIER
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XBCC-N3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Additional Feature HIGH RELIABILITY
Terminal Finish Silver/Nickel (Ag/Ni)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e4
Published 2005
Packaging Tube
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case DirectFET? Isometric SH
Mounting Type Surface Mount
Alternative Model
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