IRF6655TR1PBF
RoHS
/
Package DirectFET? Isometric SH
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 4.2A DIRECTFET
PDF
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Buying Options
Total Price: USD $16.65
Unit Price: USD $16.6459
≥1 USD $16.6459
≥10 USD $13.65815
≥100 USD $13.2316
≥500 USD $12.80505
≥1000 USD $12.37755
Inventory: 1103
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SH
Number of Pins 5
Supplier Device Package DIRECTFET? SH
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 62MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 7.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 530pF
Drain to Source Resistance 53mOhm
Rds On Max 62 mΩ
Nominal Vgs 4 V
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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