IRF6644TR1PBF
RoHS
/
Package DirectFET? Isometric MN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 10.3A DIRECTFET
PDF
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Inventory: 16223
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.05mm
Length 6.35mm
Height 506μm
Technical
Nominal Vgs 2.8 V
Recovery Time 63 ns
Avalanche Energy Rating (Eas) 86 mJ
Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 228A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 2.8V
Continuous Drain Current (ID) 8.3A
Turn-Off Delay Time 34 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 26 ns
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection DRAIN
Power Dissipation 2.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta 89W Tc
Number of Elements 1
JESD-30 Code R-XBCC-N3
Current Rating 10.3A
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Additional Feature LOW CONDUCTION LOSS
Resistance 13MOhm
Termination SMD/SMT
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case DirectFET? Isometric MN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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