IRF6643TR1PBF
RoHS
/
Package DirectFET? Isometric MZ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 6.2A DIRECTFET
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Buying Options
Total Price: USD $35.53
Unit Price: USD $35.52715
≥1 USD $35.52715
≥10 USD $29.15075
≥100 USD $28.2397
≥500 USD $27.32865
≥1000 USD $26.4176
Inventory: 1151
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MZ
Number of Pins 7
Supplier Device Package DIRECTFET? MZ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 34.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34.5mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Input Capacitance 2.34nF
Recovery Time 100 ns
Drain to Source Resistance 29mOhm
Rds On Max 34.5 mΩ
Nominal Vgs 4 V
Dimensions
Height 508μm
Length 5.45mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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