Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0077Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14mA
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta 59A Tc
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Rds On (Max) @ Id, Vgs 7.7m Ω @ 14A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.3W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ