Avalanche Energy Rating (Eas) 28 mJ
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 18A Ta 81A Tc
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ