IRF6636
RoHS
/
Package DirectFET? Isometric ST
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 18A DIRECTFET
PDF
/
Buying Options
Total Price: USD $1.32
Unit Price: USD $1.31765
≥1 USD $1.31765
≥10 USD $1.0811
≥100 USD $1.0469
≥500 USD $1.01365
≥1000 USD $0.97945
Inventory: 1130
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 18A
Drain-source On Resistance-Max 0.0045Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 28 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
Recommended For You
IRF6636+price,IRF6636+datasheet,IRF6636+in stock,buy+IRF6636,finder+IRF6636,IRF6636+tutorials,IRF6636+download