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IRF6629TRPBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 29A DIRECTFET
PDF
/
Buying Options
Total Price: USD $1.02
Unit Price: USD $1.02125
≥1 USD $1.02125
≥10 USD $0.8379
≥100 USD $0.81225
≥500 USD $0.78565
≥1000 USD $0.76
Inventory: 1190
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 5.05mm
Length 6.35mm
Height 506μm

Technical

Avalanche Energy Rating (Eas) 1170 mJ
Pulsed Drain Current-Max (IDM) 230A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0021Ohm
Drain Current-Max (Abs) (ID) 180A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 7.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 67ns
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 29A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 100W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 29A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 25V
Subcategory FET General Purpose Power
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Series HEXFET?
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 5
Package / Case DirectFET? Isometric MX
Mounting Type Surface Mount
Mount Surface Mount

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