Avalanche Energy Rating (Eas) 1170 mJ
Pulsed Drain Current-Max (IDM) 230A
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0021Ohm
Drain Current-Max (Abs) (ID) 180A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 29A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 100W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ