IRF6622TRPBF
RoHS
/
Package DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 15A DIRECTFET
PDF
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Buying Options
Total Price: USD $0.72
Unit Price: USD $0.71915
≥1 USD $0.71915
≥10 USD $0.58995
≥100 USD $0.5719
≥500 USD $0.55385
≥1000 USD $0.53485
Inventory: 40179
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 15A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 34W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 13V
Current - Continuous Drain (Id) @ 25°C 15A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0063Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 13 mJ
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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