Avalanche Energy Rating (Eas) 13 mJ
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0091Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.6A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 9.1m Ω @ 12A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ