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IRF6621TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A DIRECTFET
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 7392
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.95mm
Length 4.826mm
Height 506μm

Technical

Nominal Vgs 1.8 V
Avalanche Energy Rating (Eas) 13 mJ
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0091Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.6A
Turn-Off Delay Time 16 ns
Fall Time (Typ) 4.1 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 9.1m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Power Dissipation 42W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N2
Current Rating 12A
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 5
Package / Case DirectFET? Isometric SQ
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 13 Weeks

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