IRF6621TR1PBF
RoHS
/
Package DirectFET? Isometric SQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 12A DIRECTFET
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 1261
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SQ
Number of Pins 5
Supplier Device Package DIRECTFET? SQ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 9.6A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.46nF
Drain to Source Resistance 12.1mOhm
Rds On Max 9.1 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 506μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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