IRF6614
RoHS
/
Package DirectFET? Isometric ST
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V DIRECTFET-ST
PDF
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Buying Options
Total Price: USD $4.7
Unit Price: USD $4.6987
≥1 USD $4.6987
≥10 USD $3.8551
≥100 USD $3.7354
≥500 USD $3.61475
≥1000 USD $3.4941
Inventory: 7376
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 22 mJ
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 102A
Drain-source On Resistance-Max 0.0083Ohm
Drain Current-Max (Abs) (ID) 12.7A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12.7A Ta 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 20V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 8.3m Ω @ 12.7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.1W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XBCC-N3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case DirectFET? Isometric ST
Mounting Type Surface Mount
Alternative Model
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