IRF6612TRPBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 24A DIRECTFET
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51015
≥1 USD $0.51015
≥10 USD $0.41895
≥100 USD $0.40565
≥500 USD $0.39235
≥1000 USD $0.38
Inventory: 34013
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3970pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 136A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Rise Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 136mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 190A
Avalanche Energy Rating (Eas) 37 mJ
Nominal Vgs 1.8 V
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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