Power Dissipation-Max 2.8W Ta 89W Tc
Rds On (Max) @ Id, Vgs 3.3mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3970pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 136A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 4.4mOhm
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ