IRF6609TR1
RoHS
/
Package DirectFET? Isometric MT
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 31A DIRECTFET
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 19187
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MT
Number of Pins 7
Supplier Device Package DIRECTFET? MT
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Resistance 2mOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 31A
Power Dissipation-Max 1.8W Ta 89W Tc
Power Dissipation 2.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 10V
Current - Continuous Drain (Id) @ 25°C 31A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
Rise Time 95ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Forward Voltage 800mV
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 26 ns
Reverse Recovery Time 32 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 2.45V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 6.29nF
Drain to Source Resistance 1.6Ohm
Rds On Max 2 mΩ
Nominal Vgs 2.45 V
Dimensions
Width 5.05mm
Compliance
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
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