IRF6607TR1
RoHS
/
Package DirectFET? Isometric MT
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 27A DIRECTFET
PDF
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Buying Options
Total Price: USD $0.75
Unit Price: USD $0.7524
≥1 USD $0.7524
≥10 USD $0.6175
≥100 USD $0.59755
≥500 USD $0.57855
≥1000 USD $0.55955
Inventory: 1239
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Rds On Max 3.3 mΩ
Drain to Source Resistance 3.3mOhm
Input Capacitance 6.93nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 2V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 32 ns
Fall Time (Typ) 13 ns
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Drain to Source Voltage (Vdss) 30V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 27A Ta 94A Tc
Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V
FET Type N-Channel
Turn On Delay Time 60 ns
Power Dissipation 3.6W
Element Configuration Single
Power Dissipation-Max 3.6W Ta 42W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package DIRECTFET? MT
Number of Pins 7
Package / Case DirectFET? Isometric MT
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Silver
Alternative Model
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