IRF6604TR1
RoHS
/
Package DirectFET? Isometric MQ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 12A DIRECTFET
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.3306
≥500 USD $0.32015
≥1000 USD $0.30875
Inventory: 1139
Minimum: 1
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Technical Details
Technical
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Vgs (Max) ±12V
Turn-Off Delay Time 18 ns
Reverse Recovery Time 31 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 2.27nF
Drain to Source Resistance 11.5Ohm
Rds On Max 11.5 mΩ
Nominal Vgs 2.1 V
Input Capacitance (Ciss) (Max) @ Vds 2270pF @ 15V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 11.5mOhm @ 12A, 7V
FET Type N-Channel
Power Dissipation 2.3W
Power Dissipation-Max 2.3W Ta 42W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Resistance 11.5mOhm
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Dimensions
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Supplier Device Package DIRECTFET? MQ
Number of Pins 7
Package / Case DirectFET? Isometric MQ
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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