Drain Current-Max (Abs) (ID) 27A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -150A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 150m Ω @ 16A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)