IRF6218PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 120 Milliohms; ID -27A; TO-220AB; PD 250W
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Buying Options
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Inventory: 1165
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -150V
Technology MOSFET (Metal Oxide)
Current Rating -27A
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 21 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -27A
Threshold Voltage -5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Dual Supply Voltage -150V
Input Capacitance 2.21nF
Drain to Source Resistance 150mOhm
Rds On Max 150 mΩ
Nominal Vgs -5 V
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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